ICP Etching Process for Realizing SiC Trench MOSFETs
Advanced ICP trench etching for SiC MOSFETs achieving over 700 nm/min etch rates, rounded trench bottoms, and high uniformity on 6-inch wafers.
New Approach for Trench Type SiC MOSFET
A new trench-type SiC MOSFET fabrication approach combining ICP dry etching and ALD/PECVD gate insulators for improved breakdown and device performance.